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MPVZ12 rev 0, 09/2006 freescale semiconductor technical data ? freescale semiconductor, in c., 2006. all rights reserved. 10 kpa uncompensated silicon pressure sensors the MPVZ12 series is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output ? directly proportional to the applied pressure. this standard, low cost , uncompensated sensor permits manufacturers to design and add their own external temperature compensating and signal conditioning networks. compensation techniques are simplified because of the predictability of free scale's single element strain gauge design. features ? low cost ? patented silicon shear stress strain gauge design ? ratiometric to supply voltage ? easy to use chip carrier package options ? differential and gauge options ? durable epoxy package ? increased media compatibility fluorocarbon gel application examples ? air movement control ? environmental control systems ? level indicators ? leak detection ? medical instrumentation ? industrial controls ? pneumatic control systems ? robotics ordering information (1) 1. MPVZ12 series pressure sensors are avai lable in differential and gauge configurations. devices are available in the basic element pac kage or with pressure port fittings which provide printed circuit board mounting ease and barbed hose pressure connections. device type options case no. order number device marking ported gauge 482a MPVZ12gc6u MPVZ12g 482c MPVZ12gc7u MPVZ12g 1735 MPVZ12gw6u mz12gw 1560 MPVZ12gw7u mz12gw MPVZ12 series uncompensated pressure sensor 0 to 10 kpa (0?1.45 psi) 55 mv full scale span (typical) pin numbers 1 gnd 5 n/c 2 +v out 6 n/c 3 v s 7 n/c 4 ?v out 8 n/c note: pin 1 is noted by the notch in the lead. MPVZ12gc6u case 482a-01 MPVZ12gc7u case 482c-03 MPVZ12gw7u case 1560-02 MPVZ12gw6u case 1735-01 small outline package
MPVZ12 sensors 2 freescale semiconductor figure 1. uncompensated pressure sensor schematic voltage output versus applied differential pressure the output voltage of the diff erential or gauge sensor increases with increasing pressure applied to the pressure side (p1) relative to the vacuum side (p2). similarly, output voltage increases as increasing vacuum is applied to the vacuum side (p2) relative to the pressure side (p1). 1 2 3 4 gnd +v out ?v out +v s sensing element table 1. maximum ratings (1) 1. exposure beyond the specified limits may c ause permanent damage or degradation to the device. rating symbol value unit maximum pressure (p1 > p2) p max 75 kpa burst pressure (p1 > p2) p burst 100 kpa storage temperature t stg ?40 to +125 c operating temperature t a ?40 to +125 c
MPVZ12 sensors freescale semiconductor 3 table 2. operating characteristics (v s = 3.0 vdc, t a = 25 c unless otherwise noted, p1 > p2) characteristic symbol min typ max unit differential pressure range (1) 1. 1.0 kpa (kilopascal) equals 0.145 psi. p op 0? 10 kpa supply voltage (2) 2. device is ratiometric within this specified excitation range. operating the device above th e specified excitation range may i nduce additional error due to device self-heating. v s ? 3.0 6.0 vdc supply current i o ?6.0 ? madc full scale span (3) 3. full scale span (v fss ) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum related pressure. v fss 45 55 70 mv offset (4) 4. offset (v off ) is defined as the output voltage at the minimum rated pressure. v off 020 35 mv sensitivity ? v/ ? p?5.5 ?mv/kpa linearity (5) 5. accuracy (error budget) c onsists of the following: ? linearity: output deviation from a straight line relationshi p with pressure, using end point method, over the specified pressure range. ? temperature hysteresis: output deviation at any temperature with in the operating temperature range, after the temperature is cy cled to and from the minimum or maximum operating temperatur e points, with zero differential pressure applied. ? pressure hysteresis: output deviation at any pressure with the specified range, when th is pressure is cycled to and from the m inimum or maximum rated pressure at 25c. ? tcspan: output deviation at full rated pressure over the temperature range of 0 to 85c, relative to 25c. ? tcoffset: output deviation with minimum rate d pressure applied, over the temperature range of 0 to 85c, relative to 25c. ? tcr: z in deviation with minimum rated pressure applied, over the temperature range of -40c to 125c, relative to 25c. ? ?0.5 ? 0.5 %v fss pressure hysteresis 6 (0 to 10 kpa) ? ? 0.1 ? %v fss temperature hysteresis (5) (?40 c to +125 c) ? ? 0.5 ? %v fss temperature coefficient of full scale span (5) tcv fss ?0.22 ? ?0.16 %v fss / c temperature coefficient of offset (5) tcv off ? 15 ? v/ c temperature coefficient of resistance (5) tcr 0.28 ? 0.34 %z in / c input impedance z in 400 ? 550 w output impedance z out 750 ? 1250 w response time (6) (10% to 90%) 6. response time is defined as the time form the incremental c hange in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. t r ?1.0 ? ms warm-up time (7) 7. warm-up time is defined as the time required for the product to meet the specified output voltage after the pressure is stabi lized. ??20? ms offset stability (8) 8. offset stability is the product?s output deviation when subjected to 1000 hours of pu lsed pressure, temperature cycling with bias test. ??0.5?%v fss
MPVZ12 sensors 4 freescale semiconductor temperature compensation figure 2 shows the typical output characteristics of the MPVZ12 series over temperature. because this strain gauge is an integral part of the silicon diaphragm, there are no temperature effects due to differences in the thermal expansion of the strain gauge and the diaphragm, as are often encountered in bonded strain gauge pressure sensors. however, the properties of the strain gauge itself are temper ature dependent, requiring that the device be temperature compensated if it is to be used over an extensive temperature range. temperature compensation and offset calibration can be achieved rather simply with additional resistive components, or by designing your system using the mpx2010d series sensor. several approaches to external temperature compensation over both ?40 to +125 c and 0 to +80 c ranges are presented in applications note an840. linearity linearity refers to how well a transducer's output follows the equation: v out = v off + sensitivity x p over the operating pressure range ( figure 3 ). there are two basic methods for calculating nonlinearity: (1) end point straight line fit or (2) a least squares best line fit. while a least squares fit gives the ?best case? linearity error (l ower numerical value), the calculations required are burdensome. conversely, an end point fit will give the ?worst case? error (often more desirable in error budget calculations) and the calculations are more straightforward for the user. freescale?s specified pressure sensor linearities are based on the end point straight line method measured at the midrange pressure. figure 2. output versus pressure differential figure 3. linearity specification comparison pressure differential output (mvdc) 80 70 60 50 40 30 20 10 0 0 0.3 2.0 0.6 4.0 0.9 6.0 1.2 8.0 10 1.5 psi kpa span range (typ) offset (typ) v s = 3 v dc p1 > p2 -40 c +25 c +125 c linearity actual theoretical offset (v off ) max p op output (mvdc) pressure (kpa) 70 60 50 40 30 20 10 0 0 span (v fss )
MPVZ12 sensors freescale semiconductor 5 figure 4. cross-sectional diagram (not to scale) figure 4 illustrates the differential or gauge configuration in the basic chip carrier (applicable to cases 482, 1560 and 1735). a gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the silicon diaphragm. operating characteristics, internal reliability and qualification tests are based on use of dry clean air as the pressure media. media other than dry clean air may have adverse effects on sensor performance and long term reliability. contact the factory for information regarding media compatibility in your application. pressure (p1)/vacuum (p2) side identification table freescale designates the two sides of the pressure sensor as the pressure (p1) side and the vacuum (p2) side. the pressure (p1) side is the side containing gel which isolates the die from the environment. the freescale MPVZ12 series is designed to operate with pos itive differential pressure applied, p1 > p2. the pressure (p1) side may be identified by using the following table gel die coat wire bond die p1 stainless steel cap thermoplastic case die bond differential sensing element p2 lead frame part number case type pressure (p1) side identifier MPVZ12gc6u 482a 98asb17757c top with port attached MPVZ12gc7u 482c 98asb17759c top with port attached MPVZ12gw6u 1735 98asa10686d top with port attached MPVZ12gw7u 1560 98asa10611d top with port attached
package dimensions case 482a-01 issue a small outline package case 482c-03 issue b small outline package dim min max min max millimeters inches a 10.54 0.425 0.415 10.79 b 10.54 0.425 0.415 10.79 c 12.70 0.520 0.500 13.21 d 0.96 0.042 0.038 1.07 g 0.100 bsc 2.54 bsc h 0.002 0.010 0.05 0.25 j 0.009 0.011 0.23 0.28 k 0.061 0.071 1.55 1.80 m 0 7 0 7 n 0.444 0.448 11.28 11.38 s 0.709 0.725 18.01 18.41 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006). 5. all vertical surfaces 5 typical draft. s d g 8 pl 4 5 8 1 s b m 0.25 (0.010) a s t ?a? ?b? c m j k pin 1 identifier h seating plane ?t? n v w v 0.245 0.255 6.22 6.48 w 0.115 0.125 2.92 3.17 dim min max min max millimeters inches a 10.54 0.425 0.415 10.79 b 10.54 0.425 0.415 10.79 c 12.70 0.520 0.500 13.21 d 0.66 0.034 0.026 0.864 g 0.100 bsc 2.54 bsc j 0.009 0.011 0.23 0.28 k 0.100 0.120 2.54 3.05 m 0 15 0 15 n 0.444 0.448 11.28 11.38 s 0.540 0.560 13.72 14.22 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006). 5. all vertical surfaces 5 typical draft. 6. dimension s to center of lead when formed parallel. pin 1 k seating plane ?t? s g 4 5 8 1 ?a? ?b? c n v w m j v 0.245 0.255 6.22 6.48 w 0.115 0.125 2.92 3.17 identifier d 8 pl s b m 0.25 (0.010) a s t detail x detail x MPVZ12 sensors 6 freescale semiconductor
package dimensions case 1735-01 issue a small outline package MPVZ12 sensors freescale semiconductor 7
MPVZ12 sensors 8 freescale semiconductor package dimensions case 1735-01 issue a small outline package
package dimensions case 1735-01 issue a small outline package MPVZ12 sensors freescale semiconductor 9
MPVZ12 sensors 10 freescale semiconductor package dimensions case 1560-02 issue c small outline package
package dimensions case 1560-02 issue c small outline package MPVZ12 sensors freescale semiconductor 11
MPVZ12 sensors 12 freescale semiconductor package dimensions case 1560-02 issue c small outline package
MPVZ12 sensors freescale semiconductor 13 notes
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